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MGD3162AM550EKR2 NXP Semiconductors
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MGD3162AM550EKR2

Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Technical Specifications
Technology Magnetic Coupling
Number of Channels 1
Voltage - Isolation 8000Vrms
Common Mode Transient Immunity (Min) 100V/ns
Propagation Delay tpLH / tpHL (Max) -
Pulse Width Distortion (Max) -
Rise / Fall Time (Typ) -
Current - Output High, Low -
Current - Peak Output -
Voltage - Forward (Vf) (Typ) -
Voltage - Output Supply 12V ~ 25V
Grade Automotive
Qualification AEC-Q100
Operating Temperature -40°C ~ 150°C
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
Approval Agency UL, VDE
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging MGD3162AM550EKT
Suggested Replacement
11,646
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 26 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390070
Product Overview

The MGD3162AM550EKR2 from NXP Semiconductors falls under the galvanically isolated gate drivers category. It features a technology of Magnetic Coupling, a number of channels of 1, a voltage, isolation of 8000Vrms, a common mode transient immunity of 100V/ns, a propagation delay tplh / tphl of - and a pulse width distortion of -. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Order MGD3162AM550EKR2 from Simplytronix for authenticated stock and same-day order processing.

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