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MGD3160AM335EK NXP Semiconductors
*For representation only.

MGD3160AM335EK

Gate Drivers EV Inverter Control; IGBT & SiC GDIC
Technical Specifications
Technology Magnetic Coupling
Number of Channels 1
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 100V/ns (Max)
Propagation Delay tpLH / tpHL (Max) -
Pulse Width Distortion (Max) -
Rise / Fall Time (Typ) -
Current - Output High, Low 15A, 15A
Current - Peak Output 15A
Voltage - Forward (Vf) (Typ) -
Voltage - Output Supply 4.75V ~ 40V
Grade Automotive
Qualification AEC-Q100
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
Approval Agency UL, VDE
📦 Product Attributes
Packaging Tube
Standard Pack Qty 42
🔁 Alternate / Replacement Parts
Alternate Packaging MGD3160AM335EKR2
Suggested Replacement MGD3160AM335EKT
11,153
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Gate Drivers
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542399000
CAHTS 8542390000
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

The MGD3160AM335EK from NXP Semiconductors falls under the gate drivers category. Key specifications include a technology of Magnetic Coupling, a number of channels of 1, a voltage, isolation of 5000Vrms, a common mode transient immunity of 100V/ns (Max), a propagation delay tplh / tphl of - and a pulse width distortion of -. This part has a typical lead time of 0 Days from factory. You can source MGD3160AM335EK through Simplytronix, with fast shipping and verified authenticity.

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