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AFM906NT1

NXP Semiconductors Last Time Buy
RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
Technical Specifications
Technology LDMOS
Frequency 136MHz ~ 941MHz
Voltage - Test 10.8 V
Current Rating (Amps) 2µA
Current - Test 100 mA
Power - Output 6.8W
Voltage - Rated 30 V
Mounting Type Surface Mount
Package / Case 16-VDFN Exposed Pad
Supplier Device Package 16-DFN (4x6)
Product Attributes
Packaging Reel
Standard Pack Qty1000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,963
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryRF MOSFET Transistors
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 112 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8542330001
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

AFM906NT1 by NXP Semiconductors is a rf mosfet transistors designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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