*For representation only.
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Technical Specifications
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | 230 MHz |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | DFN1006B-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
7,162
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8542399000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541299000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
Nexperia's PDTC115EMB,315 is a widely used digital transistors in electronic designs. Key specifications include a transistor type of NPN - Pre-Biased, a current, collector (ic) of 20 mA, a voltage, collector emitter breakdown of 50 V, a resistors included of R1 and R2, a resistor, base of 100 kOhms and a resistor, emitter base of 100 kOhms. This part has a typical lead time of 365 Days from factory. Order PDTC115EMB,315 from Simplytronix for authenticated stock and same-day order processing.
