*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Vce Saturation (Max) @ Ib, Ic | 60mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA, 10V |
| Power - Max | 325 mW |
| Frequency - Transition | 75MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
13,951
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 365 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Nexperia, the PBHV8515QA-QZ is classified as a bipolar transistors - bjt. This component is defined by a transistor type of NPN, a current, collector (ic) of 500 mA, a voltage, collector emitter breakdown of 150 V, a vce saturation (max) @ ib, ic of 60mV @ 5mA, 50mA, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 200mA, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. You can source PBHV8515QA-QZ through Simplytronix, with fast shipping and verified authenticity.
