*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 152W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | QDPAK |
| Package / Case | 22-PowerBSOP Module |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
9,885
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
📄
Documentation
Datasheet not available
ℹ
Product Overview
Nexperia's NSF060120T1A0-QHP is a widely used sic mosfets in electronic designs. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 33A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 90mOhm @ 20A, 18V. This part has a typical lead time of 112 Days from factory. Simplytronix carries NSF060120T1A0-QHP in stock, backed by a genuine parts guarantee and quick dispatch.
