*For representation only.
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Power - Max | 250 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006B-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
4,433
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Nexperia's BC857AMB,315 is a widely used bipolar transistors - bjt in electronic designs. Notable characteristics of this part include a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 45 V, a vce saturation (max) @ ib, ic of 300mV @ 500µA, 10mA, a current, collector cutoff of 15nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 125 @ 2mA, 5V. This part has a typical lead time of 365 Days from factory. You can source BC857AMB,315 through Simplytronix, with fast shipping and verified authenticity.
