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Technical Specifications
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 32Gbit |
| Memory Organization | 1G x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 1360 |
Alternate / Replacement Parts
| Alternate Packaging | MT53E1G32D2FW-046 AAT:C TR |
| Suggested Replacement |
4,292
In Stock
Packaging: Tray
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Test Report Available Upon Request
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Key Specifications
| Category | DRAM |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 365 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CAHTS | 8542320020 |
| USHTS | 8542320036 |
| MXHTS | 8542320299 |
| ECCN | EAR99 |
Product Overview
MT53E1G32D2FW-046 AAT:C by Micron is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.
