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MT53E128M32D2DS-053 WT:A

Micron Obsolete
DRAM LPDDR4 4Gbit 32 200/264 WFBGA 2 WT
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4
Memory Size 4Gbit
Memory Organization 128M x 32
Memory Interface -
Clock Frequency 1.866 GHz
Write Cycle Time - Word, Page -
Voltage - Supply 1.1V
Operating Temperature -30°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 200-WFBGA
Supplier Device Package 200-WFBGA (10x14.5)
Product Attributes
Packaging Tray
Standard Pack Qty1360
Alternate / Replacement Parts
Alternate Packaging MT53E128M32D2DS-053 WT:A TR
Suggested Replacement
5,872
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHSRoHS Compliant
LifecycleVerify Status with Factory
Reported Lead Time 365 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8542320020
USHTS 8542320036
MXHTS 8542320299
ECCN EAR99
Product Overview

MT53E128M32D2DS-053 WT:A by Micron is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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