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MSCSM70TLM44C3AG

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Three Level Inverter)
FET Feature -
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Rds On (Max) @ Id, Vgs 44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 99nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 700V
Power - Max 176W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package SP3F
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,412
Units In Stock
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
ECCN EAR99
Product Overview

MSCSM70TLM44C3AG is a discrete semiconductor modules manufactured by Microchip Technology. It features a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Three Level Inverter), a FET feature of -, a drain to source voltage of 700V, a current, continuous drain (id) @ 25°C of 58A (Tc) and a rds on (max) @ id, vgs of 44mOhm @ 30A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source MSCSM70TLM44C3AG through Simplytronix, with fast shipping and verified authenticity.

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