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MSCSM170AM45CT1AG

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N Channel (Phase Leg)
FET Feature -
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id 3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 1000V
Power - Max 319W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,992
Units In Stock
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
ECCN EAR99
Product Overview

Manufactured by Microchip Technology, the MSCSM170AM45CT1AG is classified as a discrete semiconductor modules. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N Channel (Phase Leg), a FET feature of -, a drain to source voltage of 1700V (1.7kV), a current, continuous drain (id) @ 25°C of 64A (Tc) and a rds on (max) @ id, vgs of 45mOhm @ 30A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks MSCSM170AM45CT1AG for same-day shipping with genuine parts guaranteed.

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