*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N Channel (Phase Leg) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 137nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 1000V |
| Power - Max | 245W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 1 |
14,507
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The MSCSM120AM50T1AG from Microchip Technology falls under the mosfet modules category. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N Channel (Phase Leg), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 55A (Tc) and a rds on (max) @ id, vgs of 50mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source MSCSM120AM50T1AG through Simplytronix, with fast shipping and verified authenticity.
