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MSCGLQ50DH120CTBL2NG Microchip Technology
*For representation only.

MSCGLQ50DH120CTBL2NG

IGBT Modules PM-IGBT-SBD-BL2
Technical Specifications
IGBT Type -
Configuration Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 110 A
Power - Max 375 W
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Current - Collector Cutoff (Max) 25 µA
Input Capacitance (Cies) @ Vce 2.77 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,436
Units In Stock
📦
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🔑 Key Specifications
Category IGBT Modules
RoHS
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Microchip Technology's MSCGLQ50DH120CTBL2NG is a widely used igbt modules in electronic designs. This component is defined by a IGBT type of -, a configuration of Asymmetrical Bridge, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 110 A, a power, max of 375 W and a vce(on) (max) @ vge, ic of 2.4V @ 15V, 50A. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order MSCGLQ50DH120CTBL2NG from Simplytronix for authenticated stock and same-day order processing.

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