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APT100GT120JRDQ4
Microchip Technology
Active
IGBT Modules IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227
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Technical Specifications
| IGBT Type | NPT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 123 A |
| Power - Max | 570 W |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 7.85 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Supplier Device Package | ISOTOP® |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1 |
7,722
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBT Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Microchip Technology's APT100GT120JRDQ4 is a widely used igbt modules in electronic designs. Notable characteristics of this part include a IGBT type of NPT, a configuration of Single, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 123 A, a power, max of 570 W and a vce(on) (max) @ vge, ic of 3.7V @ 15V, 100A. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order APT100GT120JRDQ4 from Simplytronix for authenticated stock and same-day order processing.
