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2N5430 Microchip Technology
*For representation only.

2N5430

Bipolar Transistors - BJT Power BJT
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 7 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 40 W
Frequency - Transition 30MHz
Operating Temperature -
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Supplier Device Package TO-66
📦 Product Attributes
Packaging Tray
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,155
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 336 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The 2N5430 from Microchip Technology falls under the transistors category. Key specifications include a transistor type of NPN, a current, collector (ic) of 7 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of - and a DC current gain (hfe) (min) @ ic, vce of -. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N5430 through Simplytronix, with fast shipping and verified authenticity.

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