*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1800 |
3,706
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Factory Special Order |
| Lead Time | 252 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Micro Commercial Components (MCC), the SICW100N065H4-BP is classified as a sic mosfets. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 32A (Tc), a drive voltage of 20V and a rds on (max) @ id, vgs of 130mOhm @ 12A, 20V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SICW100N065H4-BP in stock, backed by a genuine parts guarantee and quick dispatch.
