*For representation only.
BCW66G-TP
Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,914
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 168 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Micro Commercial Components (MCC), the BCW66G-TP is classified as a bipolar transistors - bjt. This component is defined by a transistor type of NPN, a current, collector (ic) of 800 mA, a voltage, collector emitter breakdown of 45 V, a vce saturation (max) @ ib, ic of 700mV @ 50mA, 500mA, a current, collector cutoff of 20nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 160 @ 100mA, 1V. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BCW66G-TP for same-day shipping with genuine parts guaranteed.
