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CG2H40010F

MACOM Active
GaN FETs GaN HEMT DC-8.0GHz, 10 Watt
Technical Specifications
GaN FETs GaN HEMT DC 8
Product Attributes
Packaging Tray
Standard Pack Qty100
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
892
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryGaN FETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 182 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

CG2H40010F by MACOM is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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