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DCK10I650PA Littelfuse
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DCK10I650PA

SiC Schottky Diodes 650V 10A TO-220-2L
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 29.3A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 10 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 10 µA @ 650 V
Capacitance @ Vr, F 398pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,755
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The DCK10I650PA from Littelfuse falls under the sic schottky diodes category. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 29.3A, a voltage, forward (vf) (max) @ if of 1.55 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DCK10I650PA in stock, backed by a genuine parts guarantee and quick dispatch.

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