*For representation only.
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 161nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790pF @ 1000V |
| Power - Max | - |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 9-SMD Power Module |
| Supplier Device Package | SMPD |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 20 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | MCB40P1200LB-TRR |
| Suggested Replacement |
10,576
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
ℹ
Product Overview
The MCB40P1200LB-TUB from IXYS falls under the mosfet modules category. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 55A (Tc) and a rds on (max) @ id, vgs of 34mOhm @ 50A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source MCB40P1200LB-TUB through Simplytronix, with fast shipping and verified authenticity.
