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IXYN110N120C4 IXYS
*For representation only.

IXYN110N120C4

IXYS Active
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B
Technical Specifications
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 220 A
Power - Max 830 W
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 110A
Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 5.42 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,869
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 224 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541210095
TARIC 8541210000
ECCN EAR99
Product Overview

The IXYN110N120C4 from IXYS falls under the igbts category. It features a IGBT type of -, a configuration of Single, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 220 A, a power, max of 830 W and a vce(on) (max) @ vge, ic of 2.4V @ 15V, 110A. This part has a typical lead time of 224 Days from factory and ships with a full manufacturer datasheet available for download. You can source IXYN110N120C4 through Simplytronix, with fast shipping and verified authenticity.

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