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IXXN110N65C4H1 IXYS
*For representation only.

IXXN110N65C4H1

IXYS Active
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Technical Specifications
IGBT Type PT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 210 A
Power - Max 750 W
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 110A
Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 3.69 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,416
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 217 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by IXYS, the IXXN110N65C4H1 is classified as an igbt modules. Notable characteristics of this part include a IGBT type of PT, a configuration of Single, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 210 A, a power, max of 750 W and a vce(on) (max) @ vge, ic of 2.35V @ 15V, 110A. This part has a typical lead time of 217 Days from factory and ships with a full manufacturer datasheet available for download. You can source IXXN110N65C4H1 through Simplytronix, with fast shipping and verified authenticity.

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