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IXGT32N120A3 IXYS
*For representation only.

IXGT32N120A3

IGBTs GenX3 1200V IGBTs
Technical Specifications
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 230 A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 32A
Power - Max 300 W
Switching Energy -
Input Type Standard
Gate Charge 89 nC
Td (on/off) @ 25°C -
Test Condition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,698
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 455 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

IXYS's IXGT32N120A3 is a widely used igbts in electronic designs. Key specifications include a IGBT type of PT, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 75 A, a current, collector pulsed of 230 A, a vce(on) (max) @ vge, ic of 2.35V @ 15V, 32A and a power, max of 300 W. This part has a typical lead time of 455 Days from factory and ships with a full manufacturer datasheet available for download. Order IXGT32N120A3 from Simplytronix for authenticated stock and same-day order processing.

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