*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 175 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 500 pA |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Resistance - RDS(On) | 25 Ohms |
| Power - Max | 360 mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 50 |
6,608
In Stock
Packaging: Bulk
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | JFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 112 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Product Overview
2N4856 by InterFET is a jfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
