| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (Three Phase Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 50.8mOhm @ 18.2A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 5.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415pF @ 800V |
| Power - Max | 176W |
| Operating Temperature | -40°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.264", 32.10mm) |
| Supplier Device Package | DIP 44x28DA |
| Packaging | Tube |
| Standard Pack Qty | 176 |
| Category | Power Management Specialised - PMIC |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the AMM12S36LB1Z2XKMA1 is classified as a power management specialised - pmic. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (Three Phase Inverter), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 45A (Tc) and a rds on (max) @ id, vgs of 50.8mOhm @ 18.2A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. You can source AMM12S36LB1Z2XKMA1 through Simplytronix, with fast shipping and verified authenticity.