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IDV20E65D1XKSA1 Infineon Technologies
*For representation only.

IDV20E65D1XKSA1

Schottky Diodes & Rectifiers IGBT PRODUCTS
Technical Specifications
Technology Standard
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 28A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 42 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package PG-TO220-2 Full Pack
Operating Temperature - Junction -40°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,314
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Schottky Diodes & Rectifiers
RoHS RoHS Compliant
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

The IDV20E65D1XKSA1 from Infineon Technologies falls under the schottky diodes & rectifiers category. Notable characteristics of this part include a technology of Standard, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 28A, a voltage, forward (vf) (max) @ if of 1.7 V @ 20 A, a speed of Fast Recovery =< 500ns, > 200mA (Io) and a reverse recovery time of 42 ns. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. You can source IDV20E65D1XKSA1 through Simplytronix, with fast shipping and verified authenticity.

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