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FM28V100-TG

F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
Technical Specifications
Programmable Not Verified
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 90ns
Access Time 90 ns
Voltage - Supply 2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package 32-TSOP I
Product Attributes
Packaging Tray
Standard Pack Qty468
Alternate / Replacement Parts
Alternate Packaging FM28V100-TGTR
Suggested Replacement FM28V100-TGTR
1,456
In Stock
Packaging: Tray
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryF-RAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 140 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329090
CAHTS 8542320090
USHTS 8542320071
JPHTS 8542320905
KRHTS 8542321040
TARIC 8542329000
MXHTS 8542320299
ECCN EAR99
Product Overview

FM28V100-TG by Infineon Technologies is a f-ram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.