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FM25V10-DG

F-RAM FRAM
Technical Specifications
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface SPI
Clock Frequency 40 MHz
Write Cycle Time - Word, Page -
Access Time 9 ns
Voltage - Supply 2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (4x4.5)
Product Attributes
Packaging Tube
Standard Pack Qty370
Alternate / Replacement Parts
Alternate Packaging FM25V10-DGTR
Suggested Replacement
8,719
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryF-RAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 140 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329090
USHTS 8542320071
ECCN EAR99
Product Overview

FM25V10-DG by Infineon Technologies is a f-ram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.