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CY15B256Q-SXE

F-RAM 256Kb serial SPI F-RAM, 3Volt
Technical Specifications
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface SPI
Clock Frequency 33 MHz
Write Cycle Time - Word, Page -
Access Time 9 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Product Attributes
Packaging Tube
Standard Pack Qty970
Alternate / Replacement Parts
Alternate Packaging CY15B256Q-SXET
Suggested Replacement
14,181
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryF-RAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 140 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329090
CAHTS 8542320090
USHTS 8542320071
MXHTS 8542320299
ECCN EAR99
Product Overview

CY15B256Q-SXE by Infineon Technologies is a f-ram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.