| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Power - Max | 5 W |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-10 |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | BDP 953 H6327 |
| Suggested Replacement |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 105 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the BDP953H6327XTSA1 is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 500mV @ 200mA, 2A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 500mA, 1V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BDP953H6327XTSA1 for same-day shipping with genuine parts guaranteed.