| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 35.3mOhm @ 27.3A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1986pF @ 800V |
| Power - Max | 241W |
| Operating Temperature | -40°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.264", 32.10mm) |
| Supplier Device Package | DIP 44x28DA |
| Packaging | Tube |
| Standard Pack Qty | 176 |
| Category | Power Management Specialised - PMIC |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8542390090 |
| TARIC | 8542399000 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
Infineon Technologies's AMF12S25LB2ZXKMA1 is a widely used power management specialised - pmic in electronic designs. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Full Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 63A (Tc) and a rds on (max) @ id, vgs of 35.3mOhm @ 27.3A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. You can source AMF12S25LB2ZXKMA1 through Simplytronix, with fast shipping and verified authenticity.