| Diode Configuration | 1 Pair Common Anode |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) (per Diode) | 150A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 150 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Packaging | Bulk |
| Standard Pack Qty | 40 |
| Category | Diode Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 70 Days (from factory) |
| Country | Code |
|---|---|
| CNHTS | 8504409999 |
| CAHTS | 9504409099 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
MURT30010R by GeneSiC Semiconductor is a diode modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
