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MURT30010R

Diode Modules SI S-FST RECOV 3TWR 50-600V 300A100P/71R
Technical Specifications
Diode Configuration 1 Pair Common Anode
Technology Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 150A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 150 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Three Tower
Supplier Device Package Three Tower
Product Attributes
Packaging Bulk
Standard Pack Qty40
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,849
In Stock
Packaging: Bulk
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDiode Modules
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 70 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8504409999
CAHTS 9504409099
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

MURT30010R by GeneSiC Semiconductor is a diode modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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