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MURT20010R GeneSiC Semiconductor
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MURT20010R

Diode Modules SI S-FST RECOV 3TWR 50-600V 200A100P/71R
Technical Specifications
Diode Configuration 1 Pair Common Anode
Technology Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 100A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 100 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Three Tower
Supplier Device Package Three Tower
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 40
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,305
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Diode Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409999
CAHTS 9504409099
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Manufactured by GeneSiC Semiconductor, the MURT20010R is classified as a diode modules. Key specifications include a diode configuration of 1 Pair Common Anode, a technology of Standard, a voltage, DC reverse (vr) of 100 V, a current, average rectified (io) of 100A, a voltage, forward (vf) (max) @ if of 1.3 V @ 100 A and a speed of Fast Recovery =< 500ns, > 200mA (Io). This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. You can source MURT20010R through Simplytronix, with fast shipping and verified authenticity.

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