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MBRT60080R GeneSiC Semiconductor
*For representation only.

MBRT60080R

Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 600A 80P57R
Technical Specifications
Diode Configuration 1 Pair Common Anode
Technology Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) 80 V
Current - Average Rectified (Io) (per Diode) 300A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 300 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1 mA @ 80 V
Operating Temperature - Junction -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case TO-244AB Isolated Tab
Supplier Device Package Three Tower
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 40
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,809
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Diode Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

MBRT60080R is a diode modules manufactured by GeneSiC Semiconductor. Key specifications include a diode configuration of 1 Pair Common Anode, a technology of Schottky, Reverse Polarity, a voltage, DC reverse (vr) of 80 V, a current, average rectified (io) of 300A, a voltage, forward (vf) (max) @ if of 840 mV @ 300 A and a speed of Fast Recovery =< 500ns, > 200mA (Io). This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. You can source MBRT60080R through Simplytronix, with fast shipping and verified authenticity.

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