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MBR2X050A150 GeneSiC Semiconductor
*For representation only.

MBR2X050A150

Diode Modules 150V 100A Fwd Schottky
Technical Specifications
Diode Configuration 2 Independent
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) (per Diode) 50A
Voltage - Forward (Vf) (Max) @ If 880 mV @ 50 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 3 mA @ 150 V
Operating Temperature - Junction -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 52
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,486
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Diode Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

The MBR2X050A150 from GeneSiC Semiconductor falls under the diode modules category. It features a diode configuration of 2 Independent, a technology of Schottky, a voltage, DC reverse (vr) of 150 V, a current, average rectified (io) of 50A, a voltage, forward (vf) (max) @ if of 880 mV @ 50 A and a speed of Fast Recovery =< 500ns, > 200mA (Io). This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks MBR2X050A150 for same-day shipping with genuine parts guaranteed.

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