*For representation only.
GE2X8MPS06D
GeneSiC Semiconductor
Discontinued
SiC Schottky Diodes 650V 16A TO-247-3 SiC Schottky MPS
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Technical Specifications
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 19A (DC) |
| Speed | No Recovery Time > 500mA (Io) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
10,983
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
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Product Overview
GeneSiC Semiconductor's GE2X8MPS06D is a widely used sic schottky diodes in electronic designs. Key specifications include a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 19A (DC), a speed of No Recovery Time > 500mA (Io) and a operating temperature, junction of -55°C ~ 175°C. This part has a typical lead time of 154 Days from factory. Simplytronix stocks GE2X8MPS06D for same-day shipping with genuine parts guaranteed.
