*For representation only.
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Technical Specifications
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 52A (DC) |
| Speed | No Recovery Time > 500mA (Io) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
5,309
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
The GD2X30MPS12N from GeneSiC Semiconductor falls under the sic schottky diodes category. Key specifications include a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 52A (DC), a speed of No Recovery Time > 500mA (Io) and a operating temperature, junction of -55°C ~ 175°C. This part has a typical lead time of 0 Days from factory. Simplytronix carries GD2X30MPS12N in stock, backed by a genuine parts guarantee and quick dispatch.
