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GC05MPS33J-TR GeneSiC Semiconductor
*For representation only.

GC05MPS33J-TR

SiC Schottky Diodes 3300V 5A TO-263-7 SiC Schottky MPS
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 3300 V
Current - Average Rectified (Io) 11A
Voltage - Forward (Vf) (Max) @ If 3 V @ 5 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 3300 V
Capacitance @ Vr, F 337pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package TO-263-7
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,636
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The GC05MPS33J-TR from GeneSiC Semiconductor falls under the sic schottky diodes category. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 3300 V, a current, average rectified of 11A, a voltage, forward (vf) (max) @ if of 3 V @ 5 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries GC05MPS33J-TR in stock, backed by a genuine parts guarantee and quick dispatch.

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