*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
5,825
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
G3F45MT06D is a sic mosfets manufactured by GeneSiC Semiconductor. Key specifications include a FET type of N-Channel, a technology of SiC (Silicon Carbide Junction Transistor), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of -, a drive voltage of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 182 Days from factory. Order G3F45MT06D from Simplytronix for authenticated stock and same-day order processing.
