*For representation only.
G3F09MT12GB4
GeneSiC Semiconductor
Active
MOSFET Modules 1200V 9mohm Full-Bridge SiCPAK G SiC Module
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 90A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 70mA |
| Gate Charge (Qg) (Max) @ Vgs | 392nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 9850pF @ 800V |
| Power - Max | 216W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | SiCPAK G |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 48 |
11,477
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by GeneSiC Semiconductor, the G3F09MT12GB4 is classified as a mosfet modules. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Full Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 104A (Tc) and a rds on (max) @ id, vgs of 12.5mOhm @ 90A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source G3F09MT12GB4 through Simplytronix, with fast shipping and verified authenticity.