*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
11,815
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 63 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
Manufactured by Diotec Semiconductor, the DIW170SIC750 is classified as a sic mosfets. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1700 V, a current, continuous drain (id) @ 25°C of 5A (Tc), a drive voltage of 20V and a rds on (max) @ id, vgs of 750mOhm @ 2A, 10V. This part has a typical lead time of 63 Days from factory. Simplytronix carries DIW170SIC750 in stock, backed by a genuine parts guarantee and quick dispatch.
