*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 198 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
3,051
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 70 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290000 |
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Product Overview
The DI170SIC850D7 from Diotec Semiconductor falls under the sic mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1700 V, a current, continuous drain (id) @ 25°C of 7A (Tc), a drive voltage of 20V and a rds on (max) @ id, vgs of 850mOhm @ 2A, 20V. This part has a typical lead time of 70 Days from factory. Simplytronix carries DI170SIC850D7 in stock, backed by a genuine parts guarantee and quick dispatch.
