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2N7000 Diotec Semiconductor
*For representation only.

2N7000

MOSFETs MOSFET, TO-92, 60V, 0.2A, 150C, N
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
📦 Product Attributes
Packaging Ammo Pack
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,906
Units In Stock
📦 Ammo Pack
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 42 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541210095
TARIC 8541290000
ECCN EAR99
Product Overview

The 2N7000 from Diotec Semiconductor falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 200mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 5Ohm @ 500mA, 10V. This part has a typical lead time of 42 Days from factory. Order 2N7000 from Simplytronix for authenticated stock and same-day order processing.

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