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ZXTP717MATA Diodes Incorporated
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ZXTP717MATA

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 4.5 A
Voltage - Collector Emitter Breakdown (Max) 12 V
Vce Saturation (Max) @ Ib, Ic 310mV @ 150mA, 4A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA, 2V
Power - Max 3 W
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-UDFN Exposed Pad
Supplier Device Package U-DFN2020-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
2,872
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Diodes Incorporated's ZXTP717MATA is a widely used transistors in electronic designs. Key specifications include a transistor type of PNP, a current, collector (ic) of 4.5 A, a voltage, collector emitter breakdown of 12 V, a vce saturation (max) @ ib, ic of 310mV @ 150mA, 4A, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source ZXTP717MATA through Simplytronix, with fast shipping and verified authenticity.

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