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ZXTN2018FQTA Diodes Incorporated
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ZXTN2018FQTA

Bipolar Transistors - BJT Pwr Low Sat Transistor
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 210mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V
Power - Max 1 W
Frequency - Transition 130MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,900
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Diodes Incorporated, the ZXTN2018FQTA is classified as a transistors. Key specifications include a transistor type of NPN, a current, collector (ic) of 5 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 210mV @ 300mA, 6A, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 2A, 1V. This part has a typical lead time of 280 Days from factory. Order ZXTN2018FQTA from Simplytronix for authenticated stock and same-day order processing.

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