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ZTX688B Diodes Incorporated
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ZTX688B

Bipolar Transistors - BJT NPN Super E-Line
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 12 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 20mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100mA, 2V
Power - Max 1 W
Frequency - Transition 150MHz
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case E-Line-3
Supplier Device Package E-Line (TO-92 compatible)
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,189
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541290055
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

The ZTX688B from Diodes Incorporated falls under the transistors category. This component is defined by a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 12 V, a vce saturation (max) @ ib, ic of 350mV @ 20mA, 3A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 500 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source ZTX688B through Simplytronix, with fast shipping and verified authenticity.

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