*For representation only.
MJD31CHQ-13
Diodes Incorporated
Active
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 500µA, 50mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Power - Max | 1.45 W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
5,570
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
MJD31CHQ-13 is a transistors manufactured by Diodes Incorporated. It features a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 400mV @ 500µA, 50mA, a current, collector cutoff of 1µA and a DC current gain (hfe) (min) @ ic, vce of 120 @ 100mA, 3V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MJD31CHQ-13 in stock, backed by a genuine parts guarantee and quick dispatch.
