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FZT789AQTA Diodes Incorporated
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FZT789AQTA

Bipolar Transistors - BJT Pwr Low Sat Transistor SOT223 T&R 1K
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 35 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 3A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V
Power - Max 1.2 W
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,712
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
TARIC 8541210000
ECCN EAR99
Product Overview

Diodes Incorporated's FZT789AQTA is a widely used transistors in electronic designs. It features a transistor type of PNP, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 35 V, a vce saturation (max) @ ib, ic of 500mV @ 100mA, 3A, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 300 @ 10mA, 2V. This part has a typical lead time of 280 Days from factory. Simplytronix stocks FZT789AQTA for same-day shipping with genuine parts guaranteed.

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