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FZT657QTA Diodes Incorporated
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FZT657QTA

Bipolar Transistors - BJT Pwr Hi Volt Trans
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 5V
Power - Max 3 W
Frequency - Transition 30MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,038
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The FZT657QTA from Diodes Incorporated falls under the transistors category. It features a transistor type of NPN, a current, collector (ic) of 500 mA, a voltage, collector emitter breakdown of 300 V, a vce saturation (max) @ ib, ic of 500mV @ 10mA, 100mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 50 @ 100mA, 5V. This part has a typical lead time of 280 Days from factory. Simplytronix stocks FZT657QTA for same-day shipping with genuine parts guaranteed.

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