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FMMT558TA Diodes Incorporated
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FMMT558TA

Bipolar Transistors - BJT PNP High Voltage
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V
Power - Max 500 mW
Frequency - Transition 50MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,780
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

FMMT558TA is a transistors manufactured by Diodes Incorporated. This component is defined by a transistor type of PNP, a current, collector (ic) of 150 mA, a voltage, collector emitter breakdown of 400 V, a vce saturation (max) @ ib, ic of 500mV @ 6mA, 50mA, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 50mA, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source FMMT558TA through Simplytronix, with fast shipping and verified authenticity.

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